Last edited by Bralmaran
Monday, July 27, 2020 | History

6 edition of Ferroelectric thin films found in the catalog.

Ferroelectric thin films

basic properties and device physics for memory applications

  • 161 Want to read
  • 8 Currently reading

Published by Springer in Berlin, New York .
Written in English

    Subjects:
  • Thin films,
  • Ferroelectricity

  • Edition Notes

    Includes bibliographical references and index.

    StatementMasanori Okuyama, Yoshihiro Ishibashi (eds.).
    SeriesTopics in applied physics ;, v. 98.
    ContributionsOkuyama, Masanori, 1946-, Ishibashi, Yoshihiro.
    Classifications
    LC ClassificationsTA418.9.T45 F465 2005
    The Physical Object
    Paginationxiii, 244 p. :
    Number of Pages244
    ID Numbers
    Open LibraryOL3317195M
    ISBN 103540241639
    LC Control Number2004117860
    OCLC/WorldCa58477200

    The development of thin films integrated into semiconductor chips allowed for the development of ferroelectric memories with high information density. The old question of how many unit cells are necessary that ferroelectricity, which is a collective phenomenon, does not disappear, thus became important not only for basic physics but also for technology. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics.

    Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. For ferroelectric thin films, the four-state Potts model was usually employed [,]. In this model, a ferroelectric thin film can be described by a two-dimensional array of cells denoted as N x × N z with N x and N z being the number of cells along z (longitudinal) and x (transverse) directions. Each cell is related to a dipole, and the Cited by: 5.

    Ferroelectric Thin Films VII: Volume por Robert E. Jones, , disponible en Book Depository con envío gratis. Abstract. Ferroelectric rare-earth-doped Bi 4 Ti 3 O 12 thin films have been successfully prepared on Si-based substrates by using metallo-organic precursor solutions. The pyrolysis behavior of (Bi,R) 4 Ti 3 O 12 precursors depends upon the starting rare earth source, which strongly affects the surface morphology of the synthesized film. Among the (Bi,R) 4 Ti 3 O 12 films, BNT thin films Cited by: 1.


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Ferroelectric thin films Download PDF EPUB FB2

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device.

Ferroelectric thin films of perovskite structures were first deposited by the thermal evaporation of BT in the s after the discovery of the BT single crystal. 1 In the s, the sputtering process was applied for the deposition of the perovskite materials.

The PT thin films were deposited by sputtering. 2 However, their structure and ferroelectric property was not well characterized. Abstract. In this chapter, I will begin with a discussion of the general design methodology for a thin film heterostructure, then follow up by introducing several important nanostructures in a ferroelectric (FE) thin film, which should be paid the uttermost attention during the design phase of a FE thin film–based device.

Ferroelectric Thin Films X: Volume (MRS Proceedings) [Stephen R. Gilbert, Susan Trolier-McKinstry, Yoichi Miyasaka, Stephen K. Streiffer, Dirk J. Wouters] on *FREE* shipping on qualifying offers. This book, the tenth in a highly successful series from the Materials Research Society, presents technical information on ferroelectric thin films from academia.

Integration of Ferroelectric and Piezoelectric Thin Films: This book contains four parts. The first one is dedicated to concepts.

The last part gives a survey of state of the art applications using integrated piezo or/and ferroelectric films. Reviews "While of course technical, the book is clearly written, well-illustrated, and includes. Characterisation of Ferroelectric Bulk Materials and Thin Films (Springer Series in Measurement Science and Technology Book 2) - Kindle edition by Cain, Markys G.

Download it once and read it on your Kindle device, PC, phones or tablets. Use features like bookmarks, note taking and highlighting while reading Characterisation of Ferroelectric Bulk Materials and Thin Films (Springer Series in Manufacturer: Springer. The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products.

Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties.

Therefore, the study of the charge transport in ferroelectric thin films is of high importance for all the applications using ferroelectric capacitors subjected to an applied external voltage, in order to indentify the conduction mechanisms responsible for the leakage current (Chentir et al.

; Pabst et al. ; Meyer et al., ; Horii et Cited by: This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials.

Well­. @article{osti_, title = {Nanomechanics of Ferroelectric Thin Films and Heterostructures}, author = {Li, Yulan and Hu, Shenyang Y.

and Chen, L. Q.}, abstractNote = {The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability. Open Library is an open, editable library catalog, building towards a web page for every book ever published.

Ferroelectric Thin Films by Masanori Okuyama, Yoshihiro Ishibashi,Springer edition, paperback. Therefore it is necessary to grow the epitaxial ferroelectric thin films oriented to c-axis direction. In this time we prepared epitaxial growth PZT/ SrRuO 3 (SRO) thin films on single crystal SrTiO 3 (STO) substrate for probe memory device, and evaluated the film properties and the recording density with Piezoresponse force microscopy (PFM).Cited by: 2.

In these applications thin films of ferroelectric materials are typically used, as this allows the field required to switch the polarization to be achieved with a moderate voltage. However, when using thin films a great deal of attention needs to be paid to the interfaces, electrodes ferroelectric: non ferroelectric.

Read "Integration of Ferroelectric and Piezoelectric Thin Films Concepts and Applications for Microsystems" by available from Rakuten Kobo. This book contains four parts. The first one is dedicated to concepts.

It starts with the definitions and examples of wh Brand: Wiley. The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters.

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors.

Nanostructures in Ferroelectric Films for Energy Applications: Grains, Domains, Interfaces and Engineering Methods presents methods of engineering nanostructures in ferroelectric films to improve their performance in energy harvesting and conversion and storage. Ferroelectric films, which have broad applications, including the emerging energy technology, usually consist of nanoscale.

This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices.

There is a growing. Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators.

This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. X-Ray diffraction investigations were made of high-quality epitaxial thin films of the ferroelectric material lead zirconate titanate, PbZrTiO3 (PZT), grown by pulsed laser deposition (PLD).

Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAM's).ISBN: OCLC Number: Description: xiv, pages: illustrations ; 25 cm.

Contents: Testing and characterization of ferroelectric thin film capacitors / In Kyeong Yoo --Size effects in ferroelectric film capacitors: role of the film thickness and capacitor size / Igor Stolichnov --Ferroelectric thin films for memory applications: nanoscale characterization.- Ferroelectric Thin Films XII: Symposium held December, Boston, Massachusetts, U.S.A.

Edited by Susanne Hoffmann-Eifert, Hiroshi Funakubo, Vikram Joshi.